Prevention of premature breakdown of interline porous dielectrics in an integrated circuit

ABSTRACT

A non-porous dielectric barrier is provided between a porous portion of a dielectric region and an electrically conductive element of an interconnect portion of an integrated circuit. This non-porous dielectric barrier protects the integrated circuit from breakdown of the least one dielectric region caused by electrical conduction assisted by the presence of defects located in the at least one dielectric region.

PRIORITY CLAIM

This application is a divisional of U.S. application for patent Ser. No.15/137,063 filed Apr. 25, 2016, which claims priority from FrenchApplication for Patent No. 1559337 filed Oct. 1, 2015, the disclosuresof which are incorporated by reference.

TECHNICAL FIELD

Methods of implementation and embodiments disclosed herein relate tointegrated circuits, especially to CMOS technology processes, and moreparticularly to the prevention of premature breakdown of interlineporous dielectrics in the interconnect portion (commonly referred to asthe “back end of line” or BEOL portion) of an integrated circuit.

BACKGROUND

The interconnect portion of an integrated circuit conventionallyincludes at least one metallization level, and, in general, a pluralityof metallization levels, each including electrically conductive lines,for example metal lines such as lines made of copper, allowing thevarious components of the integrated circuit to be interconnected and/orconnected to inputs/outputs of the integrated circuit.

To complete interconnection, the interconnect portion also generallyincludes one or more via levels located between the metallization levelsand allowing certain of the metal lines to be connected together.

In certain cases, an interline dielectric region separating two metallines may break down prematurely, in particular when these two lines areseparated by a very small distance, for example equal to the minimumdistance specified for the CMOS technology node used.

The more advanced the CMOS technology node, i.e. the smaller the minimumdistance, the more critical this effect becomes.

SUMMARY

The inventors have discovered that this premature breakdown effect is inparticular observed when the presence of a potential difference appliedbetween two metal lines is combined with the presence of moisture and/orionic contamination in the dielectric, especially when the dielectric isporous.

The inventors have therefore deduced that this premature breakdowneffect is due to a conduction mechanism assisted by the presence ofdefects (traps) in the dielectric. More precisely, electrons thenpropagate by jumping between local states in the bandgap of thedielectric, which states are assumed to be ionized centers (electrondonors). This effect results from the lowering of the ionization energyof these centers with application of an electric field (potentialdifference between the lines). This conduction mechanism produces whatis called a “Poole-Frenkel” current, named after the two people who madethe general discovery of the existence of such a mechanism indielectrics.

Thus, it is especially proposed to solve this problem of prematuredielectric breakdown using at least one non-porous dielectric barrierinserted between a porous portion of at least one dielectric region andat least one of two electrically conductive elements, for example ametal line or track or a via, of an interconnect portion of anintegrated circuit, in order to protect this integrated circuit frombreakdown, of said at least one dielectric region, caused by electricalconduction assisted by the presence of defects in said at least onedielectric region.

Such a solution is furthermore broadly compatible with CMOS technologyprocesses in so far as it requires the addition of only a few steps anddoes not require modification or addition of masks or modification ofthe layout of the integrated circuit.

Thus, instead of addressing the cause of this problem, i.e. the presenceof moisture and/or ionic contamination in the dielectric region, andattempting to suppress or even decrease these causes, the inventors havetaken it as read that this conduction pathway will eventually form inthe dielectric, and propose instead a solution that blocks this pathwayas much as possible, i.e. prevents, as much as possible, a Poole-Frenkelleakage current from flowing between the two electrically conductiveelements separated by this dielectric region, this solution employing atleast one non-porous dielectric barrier.

In other words, according to one aspect, a process is provided forprotecting an integrated circuit from electrical conduction assisted bythe presence of defects located in a dielectric region separating twoelectrically conductive elements of the interconnect portion of theintegrated circuit, this process comprising inserting at least onenon-porous dielectric barrier between a porous portion of said at leastone dielectric region and at least one of the two electricallyconductive elements.

Although it is possible in theory to insert this dielectric barrieranywhere in the porous portion of this dielectric region, it istechnologically simpler, when the dielectric region includes a porouscentral portion, to insert said at least one non-porous barrier betweenthis porous central portion and one of the two electrically conductiveelements.

It is also preferable, and easier from a technological point of view, toinsert two non-porous dielectric barriers respectively between saidporous central portion and said two electrically conductive elements.

According to one method of implementation, the porous portion of thedielectric region is characterized by a degree of porosity higher thanor equal to a first threshold whereas the non-porous dielectric barrieris characterized by a degree of porosity lower than a second threshold.

In practice, the first threshold may be chosen to be equal to the secondthreshold, these thresholds for example being set equal to 5%.

In other words, the porous portion of the dielectric region thencontains a volume of pores (empty spaces) larger than or equal to 5% ofthe total volume of the porous portion whereas the non-porous dielectricbarrier has a volume of pores lower than 5% of the total volume of thisbarrier.

It is also advantageous for said porous portion of the dielectric regionto include a low-dielectric-constant material.

A low-dielectric-constant material is, for example, considered to be amaterial the dielectric constant of which is lower than or equal to 3.5.

Many materials may be used for the porous portion of the dielectricregion, for example porous silicon oxycarbide (porous SiOC) or,preferably, porous hydrogenated silicon oxycarbide (porous SiOCH).

Said at least one non-porous dielectric barrier preferably has athickness comprised between a lower thickness and an upper thickness.

The lower thickness is the acceptable thickness limit above which a goodbarrier effect is obtained with respect to leakage current in thedielectric, whereas the upper thickness is chosen so as not to toogreatly increase the dielectric constant of the dielectric regionincluding the preferably low-dielectric-constant porous portion and thenon-porous dielectric barrier.

By way of indication, an acceptable thickness for the non-porousdielectric barrier is a thickness comprised between 10 nm and 30 nm.

Many materials may be used for said at least one non-porous dielectricbarrier. It is for example possible to use ternary nitrides or eventetra-ethyl-oxy-silane or tetra-ethoxy-silane (TEOS oxide).

This being so, silicon carbonitride (SiCN) in either its amorphous orcrystalline state is a preferred material in particular because of itsgood adhesion to the vertical sidewalls of the porous central portion ofthe dielectric region.

As indicated above, the two electrically conductive elements may includemetal lines of a given metallization level of said interconnect portionor even vias.

This being so, because of the length of the metal tracks, it isstatistically more probable that a conduction pathway assisted bydefects will be created in an interline dielectric region.

According to another aspect, an integrated circuit is provided, thisintegrated circuit comprising an interconnect portion including at leastone metallization level possessing electrically conductive elementsmutually separated by dielectric regions.

According to one general feature of this other aspect, the integratedcircuit comprises at least one non-porous dielectric barrier locatedbetween a porous portion of at least one dielectric region and at leastone of the two electrically conductive elements separated by said atleast one dielectric region.

According to one embodiment, said at least one dielectric regionincludes a porous central portion and said at least one non-porousbarrier is located between said porous central portion and one of theelectrically conductive elements.

As a variant, the integrated circuit may include two non-porousdielectric barriers respectively located between said porous centralportion and said two electrically conductive elements.

BRIEF DESCRIPTION OF THE DRAWINGS

Other advantages and features of the invention will become apparent onexamining the detailed description of completely non-limiting methods ofimplementation and embodiments, and the appended drawings in which:

FIG. 1 is a cross-sectional view of an integrated circuit with barriersfor metal lines;

FIG. 2 is a cross-sectional view of details concerning barriers forvias; and

FIGS. 3-8 show method steps for manufacturing.

DETAILED DESCRIPTION

In FIG. 1, the reference IC designates an integrated circuit including asemiconductor substrate SB in and on which various components such astransistors (not shown here for the sake of simplicity) have beenproduced.

These components and the surface of the substrate SB are conventionallycovered with a passivation layer 1, for example a layer of silicondioxide.

The various components are separated from the interconnect (BEOL)portion of the integrated circuit, this portion here being referenced bythe reference RITX, by a first dielectric region 2 commonly referred to,by those skilled in the art, as the pre-metal dielectric (PMD) region.

The interconnect portion RITX includes a plurality of metallizationlevels and a plurality of via levels. In this example, threemetallization levels M1, M2 and M3 have been shown associated with twovia levels V1 and V2.

In this exemplary embodiment, two metal tracks or lines L1 and L2 havebeen shown in the metallization level M1 and two metal tracks or linesL3 and L4 have been shown in the second metallization level M2.

In this example, the metal tracks of the level M3 and the vias locatedin the via levels V1 and V2 are located elsewhere in the integratedcircuit and are therefore not shown in this figure.

The various metal tracks, which are for example made of copper, andvias, are embedded in a dielectric material generally referred to, bythose skilled in the art, as the intermetal dielectric (IMD).

These dielectric zones IMD are here referenced by the references 6, 8and 11.

The dielectric material used in these IMD zones 6, 8 and 11 is a porouslow-dielectric-constant material (low-k material). By way of example,the material used is hydrogenated silicon oxycarbide (SiOCH) having aporosity of between 20% and 30% and a dielectric constant k equal to 3.

Each IMD zone 6, 8 and 11 is encapsulated between two protective layers3, 7, 10 and 12 that lie parallel to the substrate and are intended toprotect the metal of the metal tracks from oxidization.

It is for example possible to use silicon carbonitride (SiCN), whichallows metal tracks made of copper to be protected from oxidation andalso prevents diffusion of the copper into the IMD dielectric material.

In FIG. 1, it may be seen that the interline dielectric regionseparating the two metal lines L1 and L2 includes a porous centralportion 60, here formed from SiOCH, flanked by two dielectric barriers 4and 5 respectively located between the porous central portion 60 and thetwo metal lines L1 and L2.

Likewise, the interline dielectric region separating the two lines L3and L4 includes a porous central portion 800, formed from SiOCH, flankedby two dielectric barriers 90 and 91 respectively located between theporous central portion 800 and the two metal lines L3 and L4.

These dielectric barriers 4, 5, 90, 91 are formed from a non-porousdielectric material, i.e. one having a porosity lower than 5%.

In practice, the dielectric barriers are advantageously made ofnon-porous SiCN, which has a porosity comprised between 2% and 3%.

Moreover, as may be seen in FIG. 1, each metal line, for example themetal line L4, is itself flanked by two non-porous dielectric barriers,namely the barrier 91 and the barrier 92.

This results from one method of implementation of the fabricationprocess, of which more will be said below.

Furthermore, the lower portion of each metal line does not make contactwith a non-porous dielectric barrier, so as to allow optional electricalcontact with a subjacent via. Here again, this absence of dielectricbarrier from the lower portion of the metal lines results from a methodof implementation of the fabrication process.

The interline dielectric region separating the metal lines L3 and L4 isrepresented in more detail in the right-hand portion of FIG. 1.

It will be noted that in this right-hand portion, the dielectric regionhas a trapezoidal shape which is a more accurate representation of theactual shape as it results from an etching process.

Due to the presence of moisture and/or ionic contamination, and alsobecause of the trapezoidal shape of the dielectric region, the densityof traps is higher at the interface and the heightened presence of ionsat this interface contributes to the creation of a leakage current I(defect-assisted current). This being so, the presence of the non-porousdiffusion barriers 90 and 91 allows the conduction pathway between thetwo metal lines to be interrupted and therefore this leakage current Ito be very greatly decreased or even suppressed.

Thus, the integrated circuit is protected from premature breakdown ofthe interline dielectric region.

FIG. 2 shows one embodiment of the integrated circuit, including viasVA1 and VA2 located in the via level V1 and electrically connecting thelines L1-L3 and L2-L4, respectively.

Although statistically there is more chance of obtaining a prematuredielectric breakdown between two metal lines than between two vias, itis also advantageous, as illustrated in FIG. 2, to also providenon-porous protective barriers in inter-via dielectric regions.

More precisely, in the described example, the dielectric regionseparating the two vias VA1 and VA2 includes a porous SiOCH centralportion 8102 flanked by two non-porous SiCN protective barriersreferenced 8100 and 8101, respectively.

Reference is now more particularly made to FIGS. 3 to 8 to describe onemethod of implementation of a process for producing such an integratedcircuit.

With these figures, production of a metal line located in the IMDdielectric zone referenced 8 will be described, but of course theteachings are applicable to any metallization and via level.

In FIG. 3, a layer 8 of porous dielectric material (SiOCH for example)has been deposited on the protective layer 7 covering the dielectricmaterial 6.

Next, as illustrated in FIG. 4, localized etching of the upper portion80 of the zone 8 intended to receive the metallization level M2 iscarried out. This localized etching allows a trench 810 intended toreceive the future metal line to be defined.

In the present case, the etching does not reach the lower portion 81 ofthe IMD dielectric zone 8 because, in this example, a via subjacent tothe metal line is not simultaneously produced.

Next, as illustrated in FIG. 5, a non-porous barrier layer, for exampleof SiCN, is deposited so as to cover the upper portion 80 and line thevertical walls and bottom wall of the trench 810.

As indicated above, this barrier layer may include SiCN.

The SiCN is, as was described above, also deposited immediately afterchemical-mechanical polishing of the preceding metallization level. Inthis regard, when the SiCN is deposited, a prior step of (NH₃) plasmacleaning is used, this step having the aim of removing the native oxidelayer on the surface of the copper at 350° C.

Furthermore, it has been observed, in this regard, that this plasmacleaning step also improves the adhesion of the SiCN layer to the porousdielectric material 80, especially on the vertical sidewalls of thetrench 810.

After the plasma clean, this barrier layer may be deposited using aplasma, in a suitable chamber, by introducing gases allowing SiCN to bedeposited (NH₃, CH₃ and He). The duration of this step sets thethickness of the layer. By way of indication, ten seconds is enough todeposit 30 nm. The deposition is then completed and the last stepcomprises pumping out residual gases and returning the chamber toatmospheric pressure.

At this stage, as illustrated in FIG. 5, the two non-porous protectivebarriers 91 and 92 have therefore been formed.

Next, as illustrated in FIG. 6, an anisotropic etch GV, for example aplasma etch, is carried out to remove the portion 93 covering the bottomwall of the trench 810 and the portion 100 covering the upper portion 80of the porous dielectric.

Removing the portion 93 allows the metal line to make electrical contactwith an optional subjacent electrically conductive element, for examplea via.

Next, as illustrated in FIG. 7, a multilayer 200 including a (TaN/Ta)barrier layer and a copper layer is deposited on the structureillustrated in FIG. 6. The TaN/Ta barrier layer prevents diffusion ofthe copper into the dielectric.

Next, as illustrated in FIG. 8, chemical mechanical polishing is carriedout so as to complete the formation of the metal line L4, and then thismetal line L4 and the adjacent dielectric are covered with theprotective layer 10 made of SiCN.

It should be noted that this production process requires only a fewadditional steps relative to a conventional CMOS process and thatexisting masks do not need to be modified or new masks provided.

1. A process, comprising: forming two electrically conductive elementsof an interconnect portion of an integrated circuit that are separatedfrom each other by a porous portion of a dielectric region; andinserting at least one non-porous dielectric barrier between the porousportion of said dielectric region and at least one of the twoelectrically conductive elements to protect the integrated circuit fromelectrical conduction assisted by the presence of defects located in thedielectric region separating the two electrically conductive elements;wherein inserting comprises providing the at least one non-porousdielectric barrier along a side wall of the porous portion of thedielectric region but not extending along a bottom surface of said atleast one of the two electrically conductive elements.
 2. The processaccording to claim 1, wherein inserting comprises inserting twonon-porous dielectric barriers along side walls of the porous portion ofthe dielectric region respectively between said porous portion and saidtwo electrically conductive elements but not extending along bottomsurfaces of either of said two electrically conductive elements.
 3. Theprocess according to claim 1, wherein said porous portion of thedielectric region has a degree of porosity higher than or equal to afirst threshold and the non-porous dielectric barrier has a degree ofporosity lower than a second threshold.
 4. The process according toclaim 3, wherein the first threshold is equal to the second threshold.5. The process according to claim 3, wherein the first threshold and thesecond threshold are equal to within 5%.
 6. The process according toclaim 1, wherein said porous portion of the dielectric region includes alow-dielectric-constant material.
 7. The process according to claim 6,wherein a dielectric constant of said low-dielectric-constant materialis lower than or equal to 3.5.
 8. The process according to claim 1,wherein the porous portion of the dielectric region contains poroushydrogenated silicon oxycarbide.
 9. The process according to claim 1,wherein said at least one non-porous dielectric barrier has a thicknesscomprised between 10 nm and 30 nm.
 10. The process according to claim 1,wherein said at least one non-porous dielectric barrier comprisessilicon carbonitride.
 11. The process according claim 1, wherein the twoelectrically conductive elements include metal lines of a givenmetallization level of said interconnect portion.
 12. The processaccording claim 1, wherein the two electrically conductive elementsinclude vias below a given metallization level of said interconnectportion.
 13. A process, comprising: forming an opening in a porousmaterial dielectric region, said opening having a side wall and a bottomwall; depositing a non-porous dielectric barrier on said side wall andsaid bottom wall; completely removing a portion of the non-porousdielectric barrier along the bottom wall; filling the opening with metalmaterial to form an electrically conductive element that is laterallyseparated from an upper portion of the porous material dielectric regionby the non-porous dielectric barrier along the side wall but is incontact with a lower portion of the porous material dielectric regionalong the bottom wall.
 14. The method according to claim 13, whereinforming the opening comprises forming a first opening and a secondopening, and wherein depositing the non-porous dielectric barriercomprises depositing the non-porous dielectric barrier on side walls andbottom walls of the first and second openings, and wherein completelyremoving comprises completely removing portions of the non-porousdielectric barrier along the bottom walls.
 15. The process according toclaim 13, wherein said porous material dielectric region has a degree ofporosity higher than or equal to a first threshold and the non-porousdielectric barrier has a degree of porosity lower than a secondthreshold.
 16. The process according to claim 15, wherein the firstthreshold is equal to the second threshold.
 17. The process according toclaim 15, wherein the first threshold and the second threshold are equalto within 5%.
 18. The process according to claim 13, wherein said porousmaterial dielectric region is made of a low-dielectric-constantmaterial.
 19. The process according to claim 18, wherein a dielectricconstant of said low-dielectric-constant material is lower than or equalto 3.5.
 20. The process according to claim 13, wherein the porousmaterial dielectric region contains porous hydrogenated siliconoxycarbide.
 21. The process according to claim 13, wherein said at leastone non-porous dielectric barrier has a thickness comprised between 10nm and 30 nm.
 22. The process according to claim 13, wherein said atleast one non-porous dielectric barrier comprises silicon carbonitride.23. The process according claim 13, wherein the electrically conductiveelement is a metal line of an interconnect metallization level.
 24. Theprocess according claim 13, wherein the electrically conductive elementis a via below an interconnect metallization level.